Nickel-tin microbump structures and method of making same

ABSTRACT

Techniques and mechanisms for providing effective connectivity with surface level microbumps on an integrated circuit package substrate. In an embodiment, different metals are variously electroplated to form a microbump which extends through a surface-level dielectric of a substrate to a seed layer including copper. The microbump includes nickel and tin, wherein the nickel aids in mitigating an absorption of seed layer copper. In another embodiment, the microbump has a mass fraction of tin, or a mass fraction of nickel, that is different in various regions along a height of the microbump.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.15/267,065, filed on Sep. 15, 2016, the entire contents of which ishereby incorporated by reference herein.

BACKGROUND 1. Technical Field

Embodiments of the present invention generally relate to the field ofintegrated circuit package substrates and more particularly, but notexclusively, to fabrication processing that provides microbumpinterconnects.

2. Background Art

Integrated circuits are typically formed on a semiconductor wafer madeof materials such as silicon. The semiconductor wafer is then processedto form various electronic devices. The wafers is usually diced intosemiconductor chips (a chip is also known as a die), which may then beattached to a substrate. The substrate is typically designed to couplethe die, directly or indirectly, to a printed circuit board, socket, orother connection. The substrate may also perform one or more otherfunctions such as protecting, isolating, insulating, and/or thermallycontrolling the die.

The substrate (for example, an interposer) has traditionally been formedfrom a core made up of a laminated multilayer structure. Typically,microbumps and other such interconnect structures are variously formedin or on the structure to facilitate electrical coupling of a die to oneor more other devices. Coreless substrates have been developed todecrease the thickness of the substrate. In a coreless substrate, aremovable core layer is typically provided, conductive and dielectriclayers built up on the removable core, and then the core is removed. Thecoreless substrate typically includes a plurality of vias formed thereininterlayer electrical connections.

As successive generations of fabrication technologies continue to scalein size, metallurgical properties of various materials have anincreasingly significant impact on the formation and operation ofinterconnect structures. Accordingly, there is an increasing demand forincremental improvements in the fabrication of structures tointerconnect microelectronic circuit devices.

BRIEF DESCRIPTION OF THE DRAWINGS

The various embodiments of the present invention are illustrated by wayof example, and not by way of limitation, in the figures of theaccompanying drawings and in which:

FIGS. 1A, 1B are cross-sectional side views of processing to form amicrobump according to an embodiment.

FIG. 2 is a flow diagram illustrating elements of a method to form oneor more microbumps according to an embodiment.

FIG. 3 is a cross-sectional diagram of an electronic assembly includinginterconnect structures according to an embodiment.

FIG. 4 is a functional block diagram illustrating elements of acomputing device in accordance with one embodiment.

FIG. 5 is a functional block diagram illustrating elements of anexemplary computer system, in accordance with an embodiment.

FIG. 6 is a cross-sectional view of an interposer in accordance with oneembodiment.

DETAILED DESCRIPTION

Embodiments discussed herein variously provide techniques and mechanismsfor improved metallurgical properties of microbump structures. Someembodiments mitigate metal dissolution that might otherwise increase thepossibility of unreliable interconnects and/or unintended conductivepaths being formed.

For example, in some conventional metallization techniques, copper (Cu)is susceptible to being drawn from a seed layer and dissolved into anadjoining metal as part of an intermetallic compound (IMC) within amicrobump being formed on the seed layer. The IMC is typically brokendown in a subsequent reflow process, resulting in a relatively highcopper level in or on the microbump itself. In the case of a tin (Sn)microbump, for example, such higher copper levels tend to be associatedwith decreased solder joint reliability. Although a thinner copper seedlayer may mitigate this problem, the formation of sufficiently thin seedlayers is usually expensive and/or unreliable. To mitigate thedissolving of copper (Cu) from a seed layer into an adjoining microbumpmetal, some embodiments variously perform electroplating nickel (Ni) aspart of the bump formation process. The term “microbump” is variouslyused to refer to either a conductive contact of a device, or a solderjoint formed form such a conductive contact. Unless otherwise indicated,“solder joint” refers herein to a solder joint formed by soldering witha microbump (where such a solder joint could also be referred tocolloquially as a “microbump”).

The technologies described herein may be implemented in one or moreelectronic devices. Non-limiting examples of electronic devices that mayutilize the technologies described herein include any kind of mobiledevice and/or stationary device, such as cameras, cell phones, computerterminals, desktop computers, electronic readers, facsimile machines,kiosks, netbook computers, notebook computers, internet devices, paymentterminals, personal digital assistants, media players and/or recorders,servers (e.g., blade server, rack mount server, combinations thereof,etc.), set-top boxes, smart phones, tablet personal computers,ultra-mobile personal computers, wired telephones, combinations thereof,and the like. Such devices may be portable or stationary. In someembodiments the technologies described herein may be employed in adesktop computer, laptop computer, smart phone, tablet computer, netbookcomputer, notebook computer, personal digital assistant, server,combinations thereof, and the like. More generally, the technologiesdescribed herein may be employed in any of a variety of electronicdevices including a substrate including interconnect structures toprovide connectivity to integrated circuitry.

FIG. 2 is a flow diagram of a method 200 for fabricating substratestructures of a microelectronic device in accordance with an embodiment.To illustrate certain features of various embodiments, method 200 isdescribed herein with reference to FIGS. 1A, 1B. Cross-sectional viewsshown in FIGS. 1A, 1B variously illustrate respective stages 100-107 ofa substrate fabrication process—such as method 200—in accordance withone exemplary embodiment. However, in different embodiments, method 200may manufacture structures other than, or in addition to, thoseillustrated by stages 100-107. In one embodiment, processing such asthat illustrated by stages 100-107 and/or method 200 is to formmicrobumps—of an interposer or other such substrate—that facilitatecoupling to an integrated circuit die.

Method 200 may include, at 210, patterning a dielectric layer, wherein acopper contact is exposed by an opening formed by the dielectric layer.The dielectric layer may include a dry film resist (DFR), or any of avariety of other such materials adapted from conventional substratefabrication techniques. For example, a dielectric layer (e.g., amaterial of the surface dielectric layer 110 shown at stage 100) may belaminated or otherwise deposited over a patterned metal layer (e.g.,sub-surface-level metal layer 120) in a substrate build-up layer.Generally, the patterned metal layer and any number of layers below thepatterned metal layer may include top build-up layers and/or other suchstructures that, for example, are formed in any manner known in the art.In some embodiments, layers (not shown) disposed under sub-surface-levelmetal layer 120 include a core or other such reinforcement structure.Alternatively, sub-surface-level metal layer 120 may be part of acoreless substrate.

The dielectric layer 110 may be of any composition known in the art andapplied over the patterned sub-surface level metal layer 120—e.g., usingprocesses adapted from any of various conventional techniques. Amaterial of dielectric layer 110 may comprise a polymer (epoxy basedresin) with silica filler to provide suitable mechanical properties thatmeet reliability requirements of the package. In some embodiments,dielectric layer 110 includes any of a variety of photosensitivematerials suitable for patterning by exposure/development processing.Alternatively or in addition, the dielectric material may be patternedby laser ablation, in various embodiments.

For example, at operation 210, one or more openings (e.g., formed by theillustrative via holes 112 shown in stage 100) may be laser drilled intothe dielectric layer (e.g., surface dielectric layer 110) to expose aportion of the underlying metal layer 120. Operations from any ofvarious conventional techniques, such as one employing CO₂ laser, may beadapted to perform such patterning. In some embodiments, the dielectricmay be further patterned to form trace recesses and/or other recessedstructures (not shown) that variously extend to respective depths in thedielectric that are less than that of the vias (i.e., where thesub-surface level metal feature 120 is not exposed by any such furtherpatterning).

Method 200 may further comprise, at 220, performing a deposition of aseed layer (e.g., seed layer 122 in stage 101) on the copper contact,wherein the seed layer includes copper. For example, electroless platingor a physical vapor deposition (i.e., sputtering) technique may be usedto deposit the seed layer 122. By way of illustration and notlimitation, electroless plating of pure copper may form a seed layerhaving a thickness in a range of 0.3 μm to 1.0 μm. In anotherembodiment, a combination of copper and titanium (Ti) may be sputteredto form a seed layer having a thickness in a range of 50 nanometers (nm)to 250 nm. However, seed layer 122 may have any of various othercompositions and/or thicknesses, in different embodiments.

The seed layer may be deposited, at 220, directly onto exposed copper ofthe contact. Alternatively, a surface finish may be deposited orotherwise formed on the copper contact prior to deposition of the seedlayer. For example, a surface finish (not shown) may be formed prior todepositing the seed layer 122—e.g., where such formation includeselectroless plating or sputtering to form on the copper contact a nickellayer (e.g., having a thickness of 3 μm to 7 μm), a palladium (Pd) layer(e.g., having a thickness of 20 μm to 60 μm) or a gold (Au) layer (e.g.,having a thickness of 30 μm to 100 μm). The composition and/or thickessof such a surface finish may be adapted from conventional techniques, insome embodiments.

In an embodiment, method 200 further comprises, at 230, electroplatingnickel directly on the seed layer, where the nickel is to form part of amicrobump structure of the substrate. For example, as shown at stage102, a patterned layer 130 of a resist material may be formed over seedlayer 122, where patterned layer 130 includes openings 132 that arevariously aligned each over a respective one of holes 112. Deposition,patterning and/or other forming of patterned layer 130 may includeoperations adapted, for example, from any of a variety of lithographic(exposure and development) processes known in the art. As shown in stage103, an electrolytic plating process may be performed to deposit nickel140 to fill via holes 112 at least in part. By way of illustration andnot limitation, nickel 140 may be deposited to a thickness of at leastsome minimum amount (e.g., at least 1 μm to 10 μm) that provides for arecess free bump of nickel in one of via holes 112. In some embodiments,nickel 140 is electroplated to a level that is above a top side ofsurface dielectric layer 110 (for example, 1 μm or more above a highestextent of seed layer 122) but, for example, below a top side ofpatterned layer 130.

Method 200 may further comprise, at 240, electroplating tin directly onthe nickel that was electroplated at 230—e.g., where the tin is to alsoform in part the same microbump structure(s) including such nickel. Inthe illustrative embodiment shown at stage 104, a subsequentelectrolytic plating process is performed to deposit tin 142 over nickel140—e.g., wherein a thickness of tin 142 is in a range of 5 μm to 30 μm.For example, only nickel 140—rather than any copper of seed layer122—may be in direct contact with some or all bottom side portions oftin 142 (at least prior to a reflow or other processing of microbumpstructures including nickel 140 and tin 142).

Although some embodiments are not limited in this regard, method 200 mayinclude or be followed by additional processing to build on and/ormodify structures formed by method 200. By way of illustration and notlimitation, as illustrated at stage 105, the temporary patterned resistlayer 130 may be subsequently removed to expose portions of theunderlying seed layer 122. A reflow process may then be performed—e.g.,to form the illustrative microbump structures 144 shown at stage 106.The presence of nickel 140 between seed layer 122 and tin 142 maymitigate an absorption of copper from seed layer 122 into tin 142 duringreflow. In some embodiments, reflow processing results in at leastpartial mixture of nickel 140 with tin 142. In some embodiments,grinding and/or polishing may be performed to mitigate a heightdifference between respective microbump structures. For example, asshown at stage 107, microbump structures 146 may result from mechanicalpolishing (CMP), buff grinding or other such processing. Additionally oralternatively, a flash etch (or other such subtractive processing) maybe subsequently performed to remove portions 148 of seed layer 122. Suchflash etching may provide for electrical isolation of microbumpstructures (e.g., including structures 144, 146) from one another at asurface of dielectric layer 110.

In some embodiments, the successive electroplating of nickel 140 and tin142 results in a microbump—such as one of microbump structures 144,146—exhibiting a mass fraction gradient (of tin or nickel, for example)along the height thereof. A mass fraction of tin (“tin mass fraction”herein) for a first region of a microbump may, for example, be differentthan a second tin mass fraction for a second region of the microbumpthat, as compared to the first region, is relatively far from anunderlying copper contact. The different fractional amounts of tin (ornickel) along the height of a microbump may exist at least prior to (andin some embodiments, after) a reflow processing of the microbump.

By way of illustration and not limitation, a bottom ten percent (10%) ofa volume of a first microbump may have a first tin mass fraction,wherein a top 10% of a volume of the first microbump has a second tinmass fraction, wherein the second tin mass fraction differs from thefirst tin mass fraction by at least 5% of the first tin mass fraction.In such an embodiment, the second tin mass fraction may differ from thefirst tin mass fraction by at least 10% (for example, by at least 20%)of the first tin mass fraction. Alternatively or in addition, a totalvolume of all tin of the first microbump may be equal to at least 75% ofa total volume of all nickel of the first microbump. For example, thetotal volume of all tin of the first microbump may be equal to at least100% (in some embodiments, at least 200%) of the total volume of allnickel of the first microbump. In some embodiments, a total tin massfraction (for the entire first microbump) is in a range of 50% to 90% ofa total volume of the first microbump. For example, the total tin massfraction may be in a range of 60% to 80% (and in some embodiments, in arange of 65% to 75%) of the total volume.

Microbump metallurgy variously provided by different embodiments maypromote the reliability of interconnects and/or limit the possibility ofunintended conductive paths being formed. In turn, this may enablemicrobumps having greater and/or more consistent heights (as measuredfrom a top surface of the dielectric layer). By way of illustration andnot limitation, microbumps of a substrate according to an embodiment mayhave respective heights that are each in a range of 6 μm to 30 μm.Alternatively or in addition, a pitch of such microbumps may be in arange of 40 μm to 150 μm. However, other dimensions and/or arrangementsof such microbumps may be provided, according to implementation-specificdetails.

FIG. 3 illustrates an electronic assembly 300 including interconnectstructures according to an embodiment. Electronic assembly 300 is merelyone example of an embodiment wherein an integrated circuit die iscoupled to a substrate (e.g., an interposer) via one or more solderjoints formed from respective microbumps. Such microbumps may resultfrom processing such as that represented by stages 100-105 and/or bymethod 200. As indicated above, a solder joint formed by soldering of amicrobump according to an embodiment may itself be referred to as a“microbump.”

A package substrate 310 of electronic assembly 300 may have aninterposer 312 and a die 314 positioned thereon. The die 314 may beformed from a material such as silicon and have circuitry thereon thatis to be coupled to the interposer 312. Although some embodiments arenot limited in this regard, the package substrate 310 may in turn becoupled to another body, for example, a computer motherboard (notshown). One or more connections between the package substrate 310,interposer 312, and die 314—e.g., including some or all of solder joints316 and 318—may have a tin-nickel metallurgy. In some embodiments, suchconnections may variously comprise an alloy of tin and nickel (and, insome embodiments, copper). By way of illustration and not limitation, agiven one of solder joints 316, 318 may comprise mostly tin and nickelby volume—e.g., wherein tin and nickel make up at least 75% (and, insome embodiments, at least 90%) of the solder joint. In such anembodiment, a total amount of tin in the solder joint may be at least75% (e.g., at least 100% and, in some embodiments, at least 200%) thetotal amount of nickel in the solder joint.

Connections between the package substrate 310 and another body may bemade using any suitable structure, such as the illustrative solder bumps320 shown. The package substrate 310 may include a variety of electronicstructures formed thereon or therein. The interposer 312 may alsoinclude electronic structures formed thereon or therein. A variety ofmaterials may be used for forming the package substrate and theinterposer. In certain embodiments, the package substrate 310 is anorganic substrate made up of one or more layers of polymer basematerial, with conducting regions for transmitting signals. In certainembodiments, the interposer 312 is made up of a ceramic base materialincluding metal regions for transmitting signals. Although someembodiments are not limited in this regard, the electronic assembly 300may include gap control structures 330—e.g., positioned between thepackage substrate 310 and the interposer 312. Such gap controlstructures 330 may mitigate a change in the height of the gap betweenthe package substrate 310 and the interposer 312, which otherwise mightoccur during reflowing while die 314 is attached to interposer 312. FIG.3 also shows the presence of underflow material 328 between theinterposer 314 and die 316, and underflow material 326 between thepackage substrate 310 and the interposer 312. The underflow materials326, 328 may be a polymer that is injected between the layers.

FIG. 4 illustrates a computing device 400 in accordance with oneembodiment. The computing device 400 houses a board 402. The board 402may include a number of components, including but not limited to aprocessor 404 and at least one communication chip 406. The processor 404is physically and electrically coupled to the board 402. In someimplementations the at least one communication chip 406 is alsophysically and electrically coupled to the board 402. In furtherimplementations, the communication chip 406 is part of the processor404.

Depending on its applications, computing device 400 may include othercomponents that may or may not be physically and electrically coupled tothe board 402. These other components include, but are not limited to,volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flashmemory, a graphics processor, a digital signal processor, a cryptoprocessor, a chipset, an antenna, a display, a touchscreen display, atouchscreen controller, a battery, an audio codec, a video codec, apower amplifier, a global positioning system (GPS) device, a compass, anaccelerometer, a gyroscope, a speaker, a camera, and a mass storagedevice (such as hard disk drive, compact disk (CD), digital versatiledisk (DVD), and so forth).

The communication chip 406 enables wireless communications for thetransfer of data to and from the computing device 400. The term“wireless” and its derivatives may be used to describe circuits,devices, systems, methods, techniques, communications channels, etc.,that may communicate data through the use of modulated electromagneticradiation through a non-solid medium. The term does not imply that theassociated devices do not contain any wires, although in someembodiments they might not. The communication chip 406 may implement anyof a number of wireless standards or protocols, including but notlimited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE802.20, long term evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE,GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, as well asany other wireless protocols that are designated as 3G, 4G, 5G, andbeyond. The computing device 400 may include a plurality ofcommunication chips 406. For instance, a first communication chip 406may be dedicated to shorter range wireless communications such as Wi-Fiand Bluetooth and a second communication chip 406 may be dedicated tolonger range wireless communications such as GPS, EDGE, GPRS, CDMA,WiMAX, LTE, Ev-DO, and others.

The processor 404 of the computing device 400 includes an integratedcircuit die packaged within the processor 404. The term “processor” mayrefer to any device or portion of a device that processes electronicdata from registers and/or memory to transform that electronic data intoother electronic data that may be stored in registers and/or memory. Thecommunication chip 406 also includes an integrated circuit die packagedwithin the communication chip 406.

In various implementations, the computing device 400 may be a laptop, anetbook, a notebook, an ultrabook, a smartphone, a tablet, a personaldigital assistant (PDA), an ultra mobile PC, a mobile phone, a desktopcomputer, a server, a printer, a scanner, a monitor, a set-top box, anentertainment control unit, a digital camera, a portable music player,or a digital video recorder. In further implementations, the computingdevice 400 may be any other electronic device that processes data.

Some embodiments may be provided as a computer program product, orsoftware, that may include a machine-readable medium having storedthereon instructions, which may be used to program a computer system (orother electronic devices) to perform a process according to anembodiment. A machine-readable medium includes any mechanism for storingor transmitting information in a form readable by a machine (e.g., acomputer). For example, a machine-readable (e.g., computer-readable)medium includes a machine (e.g., a computer) readable storage medium(e.g., read only memory (“ROM”), random access memory (“RAM”), magneticdisk storage media, optical storage media, flash memory devices, etc.),a machine (e.g., computer) readable transmission medium (electrical,optical, acoustical or other form of propagated signals (e.g., infraredsignals, digital signals, etc.)), etc.

FIG. 5 illustrates a diagrammatic representation of a machine in theexemplary form of a computer system 500 within which a set ofinstructions, for causing the machine to perform any one or more of themethodologies described herein, may be executed. In alternativeembodiments, the machine may be connected (e.g., networked) to othermachines in a Local Area Network (LAN), an intranet, an extranet, or theInternet. The machine may operate in the capacity of a server or aclient machine in a client-server network environment, or as a peermachine in a peer-to-peer (or distributed) network environment. Themachine may be a personal computer (PC), a tablet PC, a set-top box(STB), a Personal Digital Assistant (PDA), a cellular telephone, a webappliance, a server, a network router, switch or bridge, or any machinecapable of executing a set of instructions (sequential or otherwise)that specify actions to be taken by that machine. Further, while only asingle machine is illustrated, the term “machine” shall also be taken toinclude any collection of machines (e.g., computers) that individuallyor jointly execute a set (or multiple sets) of instructions to performany one or more of the methodologies described herein.

The exemplary computer system 500 includes a processor 502, a mainmemory 504 (e.g., read-only memory (ROM), flash memory, dynamic randomaccess memory (DRAM) such as synchronous DRAM (SDRAM) or Rambus DRAM(RDRAM), etc.), a static memory 506 (e.g., flash memory, static randomaccess memory (SRAM), etc.), and a secondary memory 518 (e.g., a datastorage device), which communicate with each other via a bus 530.

Processor 502 represents one or more general-purpose processing devicessuch as a microprocessor, central processing unit, or the like. Moreparticularly, the processor 502 may be a complex instruction setcomputing (CISC) microprocessor, reduced instruction set computing(RISC) microprocessor, very long instruction word (VLIW) microprocessor,processor implementing other instruction sets, or processorsimplementing a combination of instruction sets. Processor 502 may alsobe one or more special-purpose processing devices such as an applicationspecific integrated circuit (ASIC), a field programmable gate array(FPGA), a digital signal processor (DSP), network processor, or thelike. Processor 502 is configured to execute the processing logic 526for performing the operations described herein.

The computer system 500 may further include a network interface device508. The computer system 500 also may include a video display unit 510(e.g., a liquid crystal display (LCD), a light emitting diode display(LED), or a cathode ray tube (CRT)), an alphanumeric input device 512(e.g., a keyboard), a cursor control device 514 (e.g., a mouse), and asignal generation device 516 (e.g., a speaker).

The secondary memory 518 may include a machine-accessible storage medium(or more specifically a computer-readable storage medium) 532 on whichis stored one or more sets of instructions (e.g., software 522)embodying any one or more of the methodologies or functions describedherein. The software 522 may also reside, completely or at leastpartially, within the main memory 504 and/or within the processor 502during execution thereof by the computer system 500, the main memory 504and the processor 502 also constituting machine-readable storage media.The software 522 may further be transmitted or received over a network520 via the network interface device 508.

While the machine-accessible storage medium 532 is shown in an exemplaryembodiment to be a single medium, the term “machine-readable storagemedium” should be taken to include a single medium or multiple media(e.g., a centralized or distributed database, and/or associated cachesand servers) that store the one or more sets of instructions. The term“machine-readable storage medium” shall also be taken to include anymedium that is capable of storing or encoding a set of instructions forexecution by the machine and that cause the machine to perform any ofone or more embodiments. The term “machine-readable storage medium”shall accordingly be taken to include, but not be limited to,solid-state memories, and optical and magnetic media.

FIG. 6 illustrates an interposer 600 that includes one or moreembodiments. The interposer 600 is an intervening substrate used tobridge a first substrate 602 to a second substrate 604. The firstsubstrate 602 may be, for instance, an integrated circuit die. Thesecond substrate 604 may be, for instance, a memory module, a computermotherboard, or another integrated circuit die. Generally, the purposeof an interposer 600 is to spread a connection to a wider pitch or toreroute a connection to a different connection. For example, aninterposer 600 may couple an integrated circuit die to a ball grid array(BGA) 606—e.g., including or formed by one or more microbumps accordingto an embodiment—that can subsequently be coupled to the secondsubstrate 604. In some embodiments, the first and second substrates 602,604 are attached to opposing sides of the interposer 600. In otherembodiments, the first and second substrates 602, 604 are attached tothe same side of the interposer 600. And in further embodiments, threeor more substrates are interconnected by way of the interposer 600.

The interposer 600 may be formed of an epoxy resin, afiberglass-reinforced epoxy resin, a ceramic material, or a polymermaterial such as polyimide. In further implementations, the interposermay be formed of alternate rigid or flexible materials that may includethe same materials described above for use in a semiconductor substrate,such as silicon, germanium, and other group III-V and group IVmaterials.

The interposer may include metal interconnects 608 and vias 610,including but not limited to through-silicon vias (TSVs) 612. Theinterposer 600 may further include embedded devices 614 (e.g.,comprising an embedded multi-die interconnect bridge, or “EMIB”),including both passive and active devices. Such devices include, but arenot limited to, capacitors, decoupling capacitors, resistors, inductors,fuses, diodes, transformers, sensors, and electrostatic discharge (ESD)devices. More complex devices such as radio-frequency (RF) devices,power amplifiers, power management devices, antennas, arrays, sensors,and MEMS devices may also be formed on the interposer 600. In accordancewith some embodiments, apparatuses or processes disclosed herein may beused in the fabrication of interposer 600.

In one implementation, an integrated circuit (IC) package substrate,comprises a dielectric layer having via holes formed therein asub-surface-level metal layer including copper contacts each exposed toa respective one of the via holes, the copper contacts including a firstcopper contact, a first seed layer deposited on the first coppercontact, the first seed layer including copper, and a first microbumpformed on the first seed layer, the first microbump including tin andnickel.

In one embodiment, the IC package substrate further comprises a firstsurface finish portion on the first copper contact, wherein the firstseed layer is deposited on the first surface finish portion. In anotherembodiment, the nickel of the microbump is disposed directly on thecopper seed layer. In another embodiment, a bottom 10% of a volume ofthe first microbump has a first tin mass fraction, wherein a top 10% ofa volume of the first microbump has a second tin mass fraction andwherein the second tin mass fraction differs from the first tin massfraction by at least 5% of the first tin mass fraction. In anotherembodiment, the second tin mass fraction differs from the first tin massfraction by at least 10% of the first tin mass fraction. In anotherembodiment, a total volume of tin of the first microbump is equal to atleast 75% of a total volume of nickel of the first microbump. In anotherembodiment, a total tin mass fraction of the first microbump is in arange of 50% to 90%.

In another implementation, a method for forming microbumps on asubstrate, the method comprises patterning a dielectric layer, wherein acopper contact is exposed by an opening formed by the dielectric layer,performing a deposition of a seed layer on the copper contact, the seedlayer comprising copper, electroplating nickel of a first microbumpdirectly on the seed layer, and electroplating tin of the firstmicrobump directly on the nickel.

In one embodiment, performing the deposition of the seed layer includesperforming an electroless plating of the seed layer directly on thecopper contact. In another embodiment, the method further comprisesforming a surface finish on the copper contact, wherein the seed layeris deposited on the surface finish. In another embodiment, a bottom 10%of a volume of the first microbump has a first tin mass fraction,wherein a top 10% of a volume of the first microbump has a second tinmass fraction and wherein the second tin mass fraction differs from thefirst tin mass fraction by at least 5% of the first tin mass fraction.In another embodiment, the second tin mass fraction differs from thefirst tin mass fraction by at least 10% of the first tin mass fraction.In another embodiment, a total volume of tin of the first microbump isequal to at least 75% of a total volume of nickel of the firstmicrobump. In another embodiment, a total tin mass fraction of the firstmicrobump is in a range of 50% to 90%.

In another implementation, a device comprises an integrated circuit (IC)die and a substrate including a dielectric layer having via holes formedtherein, a sub-surface-level metal layer including copper contacts eachadjoining a respective one of the via holes, the copper contactsincluding a first copper contact, and a first seed layer deposited onthe first copper contact, the first seed layer including copper. Thedevice further comprises solder joints including a first solder jointcomprising tin and nickel, wherein the IC die and the first coppercontact are coupled to each other via the first solder joint.

In one embodiment, the substrate further comprises a first surfacefinish portion on the first copper contact, wherein the first seed layeris deposited on the first surface finish portion. In another embodiment,a bottom 10% of a volume of the first solder joint has a first tin massfraction, wherein a top 10% of a volume of the first solder joint has asecond tin mass fraction and wherein the second tin mass fractiondiffers from the first tin mass fraction by at least 5% of the first tinmass fraction. In another embodiment, the second tin mass fractiondiffers from the first tin mass fraction by at least 10% of the firsttin mass fraction. In another embodiment, a total volume of tin of thefirst solder joint is equal to at least 75% of a total volume of nickelof the first solder joint. In another embodiment, a total tin massfraction of the first solder joint is in a range of 50% to 90%.

Techniques and architectures for fabricating interconnect structuresincluding Tin are described herein. In the above description, forpurposes of explanation, numerous specific details are set forth inorder to provide a thorough understanding of certain embodiments. Itwill be apparent, however, to one skilled in the art that certainembodiments can be practiced without these specific details. In otherinstances, structures and devices are shown in block diagram form inorder to avoid obscuring the description.

Reference in the specification to “one embodiment” or “an embodiment”means that a particular feature, structure, or characteristic describedin connection with the embodiment is included in at least one embodimentof the invention. The appearances of the phrase “in one embodiment” invarious places in the specification are not necessarily all referring tothe same embodiment.

Some portions of the detailed description herein are presented in termsof algorithms and symbolic representations of operations on data bitswithin a computer memory. These algorithmic descriptions andrepresentations are the means used by those skilled in the computingarts to most effectively convey the substance of their work to othersskilled in the art. An algorithm is here, and generally, conceived to bea self-consistent sequence of steps leading to a desired result. Thesteps are those requiring physical manipulations of physical quantities.Usually, though not necessarily, these quantities take the form ofelectrical or magnetic signals capable of being stored, transferred,combined, compared, and otherwise manipulated. It has proven convenientat times, principally for reasons of common usage, to refer to thesesignals as bits, values, elements, symbols, characters, terms, numbers,or the like.

It should be borne in mind, however, that all of these and similar termsare to be associated with the appropriate physical quantities and aremerely convenient labels applied to these quantities. Unlessspecifically stated otherwise as apparent from the discussion herein, itis appreciated that throughout the description, discussions utilizingterms such as “processing” or “computing” or “calculating” or“determining” or “displaying” or the like, refer to the action andprocesses of a computer system, or similar electronic computing device,that manipulates and transforms data represented as physical(electronic) quantities within the computer system's registers andmemories into other data similarly represented as physical quantitieswithin the computer system memories or registers or other suchinformation storage, transmission or display devices.

Certain embodiments also relate to apparatus for performing theoperations herein. This apparatus may be specially constructed for therequired purposes, or it may comprise a general purpose computerselectively activated or reconfigured by a computer program stored inthe computer. Such a computer program may be stored in a computerreadable storage medium, such as, but is not limited to, any type ofdisk including floppy disks, optical disks, CD-ROMs, andmagnetic-optical disks, read-only memories (ROMs), random accessmemories (RAMs) such as dynamic RAM (DRAM), EPROMs, EEPROMs, magnetic oroptical cards, or any type of media suitable for storing electronicinstructions, and coupled to a computer system bus.

The algorithms and displays presented herein are not inherently relatedto any particular computer or other apparatus. Various general purposesystems may be used with programs in accordance with the teachingsherein, or it may prove convenient to construct more specializedapparatus to perform the required method steps. The required structurefor a variety of these systems will appear from the description herein.In addition, certain embodiments are not described with reference to anyparticular programming language. It will be appreciated that a varietyof programming languages may be used to implement the teachings of suchembodiments as described herein.

Besides what is described herein, various modifications may be made tothe disclosed embodiments and implementations thereof without departingfrom their scope. Therefore, the illustrations and examples hereinshould be construed in an illustrative, and not a restrictive sense. Thescope of the invention should be measured solely by reference to theclaims that follow.

1. A method for forming microbumps on a substrate, the methodcomprising: patterning a dielectric layer, wherein a copper contact isexposed by an opening formed in the dielectric layer; performing adeposition of a seed layer on the copper contact, the seed layercomprising copper; electroplating nickel of a first microbump directlyon the seed layer; and electroplating tin of the first microbumpdirectly on the nickel.
 2. The method of claim 1, wherein performing thedeposition of the seed layer includes performing an electroless platingof the seed layer directly on the copper contact.
 3. The method of claim1, wherein a bottom 10% of a volume of the first microbump has a firsttin mass fraction, wherein a top 10% of a volume of the first microbumphas a second tin mass fraction and wherein the second tin mass fractiondiffers from the first tin mass fraction by at least 5% of the first tinmass fraction.
 4. The method of claim 3, wherein the second tin massfraction differs from the first tin mass fraction by at least 10% of thefirst tin mass fraction.
 5. The method of claim 1, wherein a totalvolume of tin of the first microbump is equal to at least 75% of a totalvolume of nickel of the first microbump.
 6. The method of claim 1,wherein a total tin mass fraction of the first microbump is in a rangeof 50% to 90%.
 7. The method of claim 1, further comprising forming asurface finish on the copper contact, wherein the seed layer isdeposited on the surface finish.
 8. A method of fabricating anintegrated circuit (IC) package substrate, the method comprising:forming a dielectric layer above a sub-surface-level metal layer, thesub-surface-level metal layer including copper contacts; forming viaholes in the dielectric layer, the via holes exposing the coppercontacts; forming a seed layer in the via holes and above the coppercontacts, the seed layer including copper; and forming microbumps on theseed layer, the microbumps including tin and nickel, wherein a bottomten percent of a volume of each of the microbumps has a first tin massfraction, wherein a top ten percent of the volume of each of themicrobumps has a second tin mass, and wherein the second tin massfraction differs from the first tin mass fraction by at least fivepercent of the first tin mass fraction.
 9. The method of claim 8,further comprising: prior to forming the seed layer, forming a surfacefinish on the copper contacts, wherein the seed layer is formed on thesurface finish.
 10. The method of claim 8, wherein the seed layer isformed directly on the copper contacts.
 11. The method of claim 8,wherein nickel of each of the microbumps is directly on the seed layer.12. The method of claim 8, wherein the second tin mass fraction differsfrom the first tin mass fraction by at least ten percent of the firsttin mass fraction.
 13. The method of claim 8, wherein a total tin massfraction of each of the microbumps is in a range of 50% to 90%.
 14. Amethod of fabricating an integrated circuit (IC) package substrate, themethod comprising: forming a dielectric layer above a sub-surface-levelmetal layer, the sub-surface-level metal layer including coppercontacts; forming via holes in the dielectric layer, the via holesexposing the copper contacts; forming a seed layer in the via holes andabove the copper contacts, the seed layer including copper; and formingmicrobumps on the seed layer, the microbumps including tin and nickel,wherein a total volume of tin of each of the microbumps is equal to atleast 75% of a total volume of nickel of each of the microbumps.
 15. Themethod of claim 14, further comprising: prior to forming the seed layer,forming a surface finish on the copper contacts, wherein the seed layeris formed on the surface finish.
 16. The method of claim 14, wherein theseed layer is formed directly on the copper contacts.
 17. The method ofclaim 14, wherein nickel of each of the microbumps is directly on theseed layer.
 18. The method of claim 14, wherein a total tin massfraction of each of the microbumps is in a range of 50% to 90%.
 19. Themethod of claim 14, wherein a bottom ten percent of a volume of each ofthe microbumps has a first tin mass fraction, wherein a top ten percentof the volume of each of the microbumps has a second tin mass, andwherein the second tin mass fraction differs from the first tin massfraction by at least five percent of the first tin mass fraction. 20.The method of claim 19, wherein the second tin mass fraction differsfrom the first tin mass fraction by at least ten percent of the firsttin mass fraction.